2007-04-19 1 smbta14/mmbta14 1 2 3 npn silicon darlington transistor ? high collector current ? low collector-emitter saturation voltage ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package smbta14/mmbta14 s1n 1=b 2=e 3=c sot23 maximum ratings parameter symbol value unit collector-emitter voltage v ces 30 v collector-base voltage v cbo 30 emitter-base voltage v ebo 10 collector current i c 300 ma peak collector current i cm 500 base current i b 100 peak base current i bm 200 total power dissipation- t s 81 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 210 k/w 1 pb-containing package may be available upon special request 2 for calculation of r thja please refer to application note thermal resistance
2007-04-19 2 smbta14/mmbta14 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 30 - - v collector-emitter breakdown voltage i c = 10 a, v be = 0 v (br)ces 30 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 10 - - collector-base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 10 a emitter-base cutoff current v eb = 10 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 100 ma, v ce = 5 v h fe 10000 20000 - - - - - collector-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v cesat - - 1.5 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 2 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz f t 125 - - mhz collector-base capacitance v cb = 10 v, f = 100 mhz c cb - 3 - pf 1 pulse test: t < 300s; d < 2%
2007-04-19 3 smbta14/mmbta14 dc current gain h fe = ? ( i c ) v ce = 5 v 10 ehp00829 smbta 13/14 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ?c 125 5 25 ?c -55 ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 1000 0 10 ehp00826 smbta 13/14 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 1000 0 10 ehp00827 smbta 13/14 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 10 10 10 0 50 100 150 smbta 13/14 ehp00828 t a cb0 ?c 10 10 4 3 2 1 0 5 5 5 max typ na
2007-04-19 4 smbta14/mmbta14 transition frequency f t = ? ( i c ) v ce = 5 v, f = 200 mhz 10 ehp00825 smbta 13/14 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb / v eb 1 3 5 7 9 11 13 15 pf 19 c cb / c eb ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 30 60 90 120 150 180 210 240 270 300 mw 360 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00824 smbta 13/14 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2007-04-19 5 smbta14/mmbta14 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2007-04-19 6 smbta14/mmbta14 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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